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 SLD233VL
Index-Guided High Power AlGaAs Laser Diode
Description The SLD233VL is a high power index-guided AlGaAs laser diode. Features * Low noise * Low power consumption Applications Pickups for MiniDisc recording/playback Structure * AlGaAs quantum well-structure laser diode * PIN photodiode for optical power output monitor Recommended Operating Optical Power Output 30mW Absolute Maximum Ratings (Tc = 25C) * Optical power output PO 35 mW * Reverse voltage VR LD 2 V PD 15 V * Operating temperature Topr -10 to +60 C * Storage temperature Tstg -40 to +85 C Connection Diagram
3 COMMON
M-274
Pin Configuration
PD 2 1
LD 2 1
3 1. LD ANODE 2. PD ANODE 3. COMMON Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
E97940-PS
SLD233VL
Optical and Electrical Characteristics (Tc = 25C) Item Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle Positional accuracy Ith Iop Vop // X, Y, Z // D As PO = 4mW PO = 30mW 0.55 0.9 -16 0.7 PO = 35mW PO = 35mW PO = 35mW PO = 35mW PO = 35mW 780 26 7.4 Symbol Conditions Min. Typ. 30 70 2.0 790 28.5 8.5
Tc: Case temperature Max. 40 85 2.5 800 32 10.0 80 3 2 1.2 Unit mA mA V nm degree degree m degree degree mW/mA m 0.9
Perpendicular Parallel Position Angle
Differential efficiency Astigmatism Coherence
-2-
SLD233VL
Package Outline
Unit: mm
M-274
Reference Slot 0.5 3 1.0
90
2
1
0 5.6 - 0.025 Window Glass 4.4 MAX 3.7 MAX 1.0 MIN 0.5 MIN
0.4
231 3 - 0.45 PCD 2.0
Optical Distance = 1.35 0.08
SONY CODE EIAJ CODE JEDEC CODE
M-274
6.5
LD Chip & Photo Diode
1.2 0.1
Reference Plane
2.6 MAX
0.25
1.26
PACKAGE WEIGHT
0.3g
-3-


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